Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

Yong Qing Fu; Jikui Luo; S. B. Milne; Andrew Flewitt; William Milne

doi:10.1109/MEMSYS.2016.7421813

Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

Yong Qing Fu, Jikui Luo, S. B. Milne, Andrew Flewitt, William Milne

Mathematics, Physics and Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.

Original language	English
DOIs	https://doi.org/10.1109/MEMSYS.2016.7421813
Publication status	Published - Jan 2016
Event	IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) - Shanghai Duration: 1 Jan 2016 → …

Conference

Conference	IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)
Period	1/01/16 → …

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10.1109/MEMSYS.2016.7421813

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title = "Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator",

abstract = "A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.",

author = "Fu, {Yong Qing} and Jikui Luo and Milne, {S. B.} and Andrew Flewitt and William Milne",

year = "2016",

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AU - Fu, Yong Qing

AU - Luo, Jikui

AU - Milne, S. B.

AU - Flewitt, Andrew

AU - Milne, William

PY - 2016/1

Y1 - 2016/1

N2 - A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.

AB - A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.

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DO - 10.1109/MEMSYS.2016.7421813

M3 - Paper

T2 - IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)

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ER -

Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

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