Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

Yong Qing Fu, Jikui Luo, S. B. Milne, Andrew Flewitt, William Milne

Research output: Contribution to conferencePaperpeer-review

Abstract

A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.
Original languageEnglish
DOIs
Publication statusPublished - Jan 2016
EventIEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) - Shanghai
Duration: 1 Jan 2016 → …

Conference

ConferenceIEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)
Period1/01/16 → …

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