Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed.
|Publication status||Published - Dec 2011|
|Event||Department of Atomic Energy - Solid State Physics Symposium - SRM University, Tamilnadu, India|
Duration: 1 Dec 2011 → …
|Conference||Department of Atomic Energy - Solid State Physics Symposium|
|Period||1/12/11 → …|