Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition

K. Nagamani; Naidu Revathi; Yekula Lingappa; Kotte Ramakrishna Reddy; Robert Miles

Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition

K. Nagamani, Naidu Revathi, Yekula Lingappa, Kotte Ramakrishna Reddy, Robert Miles

Research output: Contribution to conference › Paper › peer-review

Abstract

Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed.

Original language	English
Publication status	Published - Dec 2011
Event	Department of Atomic Energy - Solid State Physics Symposium - SRM University, Tamilnadu, India Duration: 1 Dec 2011 → … http://www.srmuniv.ac.in/index.php

Conference

Conference	Department of Atomic Energy - Solid State Physics Symposium
Period	1/12/11 → …
Internet address	http://www.srmuniv.ac.in/index.php

Cite this

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title = "Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition",

abstract = "Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5\% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of {\textquoteleft}Sn{\textquoteright} composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. \%. The Raman studies showed different peaks related to In2S3 phase and didn{\textquoteright}t show any secondary phases of In-S and Sn-S. The results are presented and discussed.",

author = "K. Nagamani and Naidu Revathi and Yekula Lingappa and \{Ramakrishna Reddy\}, Kotte and Robert Miles",

year = "2011",

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language = "English",

note = "Department of Atomic Energy - Solid State Physics Symposium ; Conference date: 01-12-2011",

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TY - CONF

T1 - Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition

AU - Nagamani, K.

AU - Revathi, Naidu

AU - Lingappa, Yekula

AU - Ramakrishna Reddy, Kotte

AU - Miles, Robert

PY - 2011/12

Y1 - 2011/12

N2 - Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed.

AB - Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed.

UR - http://www.barc.gov.in/symposium/ssps2011/

M3 - Paper

T2 - Department of Atomic Energy - Solid State Physics Symposium

Y2 - 1 December 2011

ER -

Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition

Abstract

Conference

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