Study of crystallographic properties and elemental migration in two-stage prepared Cu(In,Al) Se2

Rémi Aninat; Guillaume Zoppi; Patrick Chapon; Robert Miles; Ian Forbes; Horiba Jobin Yvon

Study of crystallographic properties and elemental migration in two-stage prepared Cu(In,Al) Se2

Rémi Aninat, Guillaume Zoppi, Patrick Chapon, Robert Miles, Ian Forbes, Horiba Jobin Yvon

Mathematics, Physics and Electrical Engineering

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Abstract

CuInAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CuInSe2 lattice.

Original language	English
Publication status	Published - 2012
Event	8th Photovoltaic Science Applications and Technology (PVSAT-8) - Northumbria University, Newcastle upon Tyne Duration: 1 Jan 2012 → … http://www.pvsat.org.uk/

Conference

Conference	8th Photovoltaic Science Applications and Technology (PVSAT-8)
Period	1/01/12 → …
Internet address	http://www.pvsat.org.uk/

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Aninat 47-2012-04-PVSAT8-Aninat CIASAccepted author manuscript, 2.48 MB

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title = "Study of crystallographic properties and elemental migration in two-stage prepared Cu(In,Al) Se2",

abstract = "CuInAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CuInSe2 lattice.",

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T1 - Study of crystallographic properties and elemental migration in two-stage prepared Cu(In,Al) Se2

AU - Aninat, Rémi

AU - Zoppi, Guillaume

AU - Chapon, Patrick

AU - Miles, Robert

AU - Forbes, Ian

AU - Yvon, Horiba Jobin

PY - 2012

Y1 - 2012

N2 - CuInAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CuInSe2 lattice.

AB - CuInAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CuInSe2 lattice.

M3 - Paper

T2 - 8th Photovoltaic Science Applications and Technology (PVSAT-8)

Y2 - 1 January 2012

ER -

Study of crystallographic properties and elemental migration in two-stage prepared Cu(In,Al) Se2

Abstract

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