Surface acoustic wave nebulization on nanocrystalline ZnO film

Yong Qing Fu; Yifan Li; Chao Zhao; Frank Placido; Anthony Walton

doi:10.1063/1.4767126

Surface acoustic wave nebulization on nanocrystalline ZnO film

Yong Qing Fu, Yifan Li, Chao Zhao, Frank Placido, Anthony Walton

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Surface acoustic wave(SAW) nebulization/atomization has been realised on thin ZnOfilm based SAWdevices. The surface acoustic wave nebulization (SAWN) process has been observed to produce significant mist generation and ejected satellitedroplets. By modifying the geometry of the interdigitated transducers to reduce the wavelengths from 400 μm to 120 μm, higher frequency SAWN has been achieved by increasing radio frequency driving frequencies from 11.8 MHz to 37.2 MHz, respectively. Compared with the commonly used LiNbO3 SAWN devices,ZnOfilmdevices exhibit better thermal dissipation, and to date, they have shown no susceptibility to substrate failure during fabrication or operation. They also have the added advantage of the technology being suitable for direct integration with microsystems and integrated circuit microelectronics.

Original language	English
Pages (from-to)	194101
Journal	Applied Physics Letters
Volume	101
Issue number	19
DOIs	https://doi.org/10.1063/1.4767126
Publication status	Published - 2012

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title = "Surface acoustic wave nebulization on nanocrystalline ZnO film",

abstract = "Surface acoustic wave(SAW) nebulization/atomization has been realised on thin ZnOfilm based SAWdevices. The surface acoustic wave nebulization (SAWN) process has been observed to produce significant mist generation and ejected satellitedroplets. By modifying the geometry of the interdigitated transducers to reduce the wavelengths from 400 μm to 120 μm, higher frequency SAWN has been achieved by increasing radio frequency driving frequencies from 11.8 MHz to 37.2 MHz, respectively. Compared with the commonly used LiNbO3 SAWN devices,ZnOfilmdevices exhibit better thermal dissipation, and to date, they have shown no susceptibility to substrate failure during fabrication or operation. They also have the added advantage of the technology being suitable for direct integration with microsystems and integrated circuit microelectronics.",

author = "Fu, {Yong Qing} and Yifan Li and Chao Zhao and Frank Placido and Anthony Walton",

year = "2012",

doi = "10.1063/1.4767126",

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AU - Fu, Yong Qing

AU - Li, Yifan

AU - Zhao, Chao

AU - Placido, Frank

AU - Walton, Anthony

PY - 2012

Y1 - 2012

N2 - Surface acoustic wave(SAW) nebulization/atomization has been realised on thin ZnOfilm based SAWdevices. The surface acoustic wave nebulization (SAWN) process has been observed to produce significant mist generation and ejected satellitedroplets. By modifying the geometry of the interdigitated transducers to reduce the wavelengths from 400 μm to 120 μm, higher frequency SAWN has been achieved by increasing radio frequency driving frequencies from 11.8 MHz to 37.2 MHz, respectively. Compared with the commonly used LiNbO3 SAWN devices,ZnOfilmdevices exhibit better thermal dissipation, and to date, they have shown no susceptibility to substrate failure during fabrication or operation. They also have the added advantage of the technology being suitable for direct integration with microsystems and integrated circuit microelectronics.

AB - Surface acoustic wave(SAW) nebulization/atomization has been realised on thin ZnOfilm based SAWdevices. The surface acoustic wave nebulization (SAWN) process has been observed to produce significant mist generation and ejected satellitedroplets. By modifying the geometry of the interdigitated transducers to reduce the wavelengths from 400 μm to 120 μm, higher frequency SAWN has been achieved by increasing radio frequency driving frequencies from 11.8 MHz to 37.2 MHz, respectively. Compared with the commonly used LiNbO3 SAWN devices,ZnOfilmdevices exhibit better thermal dissipation, and to date, they have shown no susceptibility to substrate failure during fabrication or operation. They also have the added advantage of the technology being suitable for direct integration with microsystems and integrated circuit microelectronics.

U2 - 10.1063/1.4767126

DO - 10.1063/1.4767126

M3 - Article

SN - 0003-6951

VL - 101

SP - 194101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Surface acoustic wave nebulization on nanocrystalline ZnO film

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