TY - GEN
T1 - Taguchi analysis of surface roughness of tic thin films deposited by rf magnetron sputtering
AU - Abegunde, Olayinka Oluwatosin
AU - Akinlabi, Esther T.
AU - Oladijo, O. P.
N1 - Funding Information:
Acknowledgements The authors would like to acknowledge the Council for Scientific and Industrial Research (CSIR) for the funding provided towards this research study.
Publisher Copyright:
© Springer Nature Singapore Pte Ltd 2020.
PY - 2020
Y1 - 2020
N2 - The surface roughness of materials can affect the performance of the surface properties of materials. For a material to perform and interact optimally on the interfacial level with the surrounding environment, it is crucial the surface roughness is also optimized. In this research study, RF magnetron sputtering was used to deposit TiC thin films. Taguchi analysis was used for optimizing the process parameters for optimal surface roughness. Three levels and three factors were developed for the experimental matrix with RF power, sputtering time and temperatures as the independent factors. Optical profilometer was used for the characterization of the surface roughness, and Raman analysis was performed to study the structural defect on the thin film surface. From the Taguchi analysis, the RF Power contributed the most to the surface roughness properties with contribution rate of 95.62% and error level of 3.63%. The result of the Raman analysis shows that the process parameters affect the structural orientation defect of the thin films with no active vibration for some thin films produced at RF power of 200 W.
AB - The surface roughness of materials can affect the performance of the surface properties of materials. For a material to perform and interact optimally on the interfacial level with the surrounding environment, it is crucial the surface roughness is also optimized. In this research study, RF magnetron sputtering was used to deposit TiC thin films. Taguchi analysis was used for optimizing the process parameters for optimal surface roughness. Three levels and three factors were developed for the experimental matrix with RF power, sputtering time and temperatures as the independent factors. Optical profilometer was used for the characterization of the surface roughness, and Raman analysis was performed to study the structural defect on the thin film surface. From the Taguchi analysis, the RF Power contributed the most to the surface roughness properties with contribution rate of 95.62% and error level of 3.63%. The result of the Raman analysis shows that the process parameters affect the structural orientation defect of the thin films with no active vibration for some thin films produced at RF power of 200 W.
KW - Process parameters
KW - RF magnetron sputtering
KW - Surface roughness
KW - Taguchi
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=85091266758&partnerID=8YFLogxK
U2 - 10.1007/978-981-15-5753-8_8
DO - 10.1007/978-981-15-5753-8_8
M3 - Conference contribution
AN - SCOPUS:85091266758
SN - 9789811557521
T3 - Lecture Notes in Mechanical Engineering
SP - 77
EP - 85
BT - Advances in Manufacturing Engineering - Selected Articles from ICMMPE 2019
A2 - Emamian, Seyed Sattar
A2 - Yusof, Farazila
A2 - Awang, Mokhtar
PB - Springer
T2 - 5th International Conference on Mechanical, Manufacturing and Plant Engineering, ICMMPE 2019
Y2 - 19 November 2019 through 21 November 2019
ER -