Test structure for characterising low voltage coplanar EWOD system

Yifan Li; Mita Yoshio; Les Haworth; William Parkes; Masanori Kubota; Anthony Walton

doi:10.1109/ICMTS.2008.4509318

Test structure for characterising low voltage coplanar EWOD system

Yifan Li^*, Mita Yoshio, Les Haworth, William Parkes, Masanori Kubota, Anthony Walton

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

This paper presents test structures designed for studying the relationship between the operation voltage and the configuration of electrode area for coplanar EWOD (ElectroWetting On Dielectrics) devices. Robust anodic Ta ₂O₅ dielectric and thin aFP (amorphous Fluoropolymer) have been used to fabricate the structures. Test structures have been used to characterise the significant contact angle change on asymmetric configurations, 114° to 81° on CYTOP (amorphous fluoropolymer from Asahi Glass Co. Ltd.) with an applied voltage of less than 20V. This demonstrates that by modifying the design, the operating voltage can be reduced by a factor of two, compared to the existing symmetric coplanar EWOD structures. Droplet manipulation on a coplanar EWOD system with this new design has been successfully demonstrated, with a driving voltage of 15V.

Original language	English
Title of host publication	2008 IEEE Conference on Microelectronic Test Structures, ICMTS
Pages	80-85
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2008.4509318
Publication status	Published - 15 Sept 2008
Externally published	Yes
Event	2008 IEEE Conference on Microelectronic Test Structures, ICMTS - Edinburgh, United Kingdom Duration: 24 Mar 2008 → 27 Mar 2008

Publication series

Name	IEEE International Conference on Microelectronic Test Structures

Conference

Conference	2008 IEEE Conference on Microelectronic Test Structures, ICMTS
Country/Territory	United Kingdom
City	Edinburgh
Period	24/03/08 → 27/03/08

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Cite this

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title = "Test structure for characterising low voltage coplanar EWOD system",

abstract = "This paper presents test structures designed for studying the relationship between the operation voltage and the configuration of electrode area for coplanar EWOD (ElectroWetting On Dielectrics) devices. Robust anodic Ta 2O5 dielectric and thin aFP (amorphous Fluoropolymer) have been used to fabricate the structures. Test structures have been used to characterise the significant contact angle change on asymmetric configurations, 114° to 81° on CYTOP (amorphous fluoropolymer from Asahi Glass Co. Ltd.) with an applied voltage of less than 20V. This demonstrates that by modifying the design, the operating voltage can be reduced by a factor of two, compared to the existing symmetric coplanar EWOD structures. Droplet manipulation on a coplanar EWOD system with this new design has been successfully demonstrated, with a driving voltage of 15V.",

author = "Yifan Li and Mita Yoshio and Les Haworth and William Parkes and Masanori Kubota and Anthony Walton",

year = "2008",

month = sep,

day = "15",

doi = "10.1109/ICMTS.2008.4509318",

language = "English",

isbn = "9781424418008",

series = "IEEE International Conference on Microelectronic Test Structures",

pages = "80--85",

booktitle = "2008 IEEE Conference on Microelectronic Test Structures, ICMTS",

note = "2008 IEEE Conference on Microelectronic Test Structures, ICMTS ; Conference date: 24-03-2008 Through 27-03-2008",

}

Li, Y, Yoshio, M, Haworth, L, Parkes, W, Kubota, M & Walton, A 2008, Test structure for characterising low voltage coplanar EWOD system. in 2008 IEEE Conference on Microelectronic Test Structures, ICMTS., 4509318, IEEE International Conference on Microelectronic Test Structures, pp. 80-85, 2008 IEEE Conference on Microelectronic Test Structures, ICMTS, Edinburgh, United Kingdom, 24/03/08. https://doi.org/10.1109/ICMTS.2008.4509318

Test structure for characterising low voltage coplanar EWOD system. / Li, Yifan; Yoshio, Mita; Haworth, Les et al.
2008 IEEE Conference on Microelectronic Test Structures, ICMTS. 2008. p. 80-85 4509318 (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Test structure for characterising low voltage coplanar EWOD system

AU - Li, Yifan

AU - Yoshio, Mita

AU - Haworth, Les

AU - Parkes, William

AU - Kubota, Masanori

AU - Walton, Anthony

PY - 2008/9/15

Y1 - 2008/9/15

N2 - This paper presents test structures designed for studying the relationship between the operation voltage and the configuration of electrode area for coplanar EWOD (ElectroWetting On Dielectrics) devices. Robust anodic Ta 2O5 dielectric and thin aFP (amorphous Fluoropolymer) have been used to fabricate the structures. Test structures have been used to characterise the significant contact angle change on asymmetric configurations, 114° to 81° on CYTOP (amorphous fluoropolymer from Asahi Glass Co. Ltd.) with an applied voltage of less than 20V. This demonstrates that by modifying the design, the operating voltage can be reduced by a factor of two, compared to the existing symmetric coplanar EWOD structures. Droplet manipulation on a coplanar EWOD system with this new design has been successfully demonstrated, with a driving voltage of 15V.

AB - This paper presents test structures designed for studying the relationship between the operation voltage and the configuration of electrode area for coplanar EWOD (ElectroWetting On Dielectrics) devices. Robust anodic Ta 2O5 dielectric and thin aFP (amorphous Fluoropolymer) have been used to fabricate the structures. Test structures have been used to characterise the significant contact angle change on asymmetric configurations, 114° to 81° on CYTOP (amorphous fluoropolymer from Asahi Glass Co. Ltd.) with an applied voltage of less than 20V. This demonstrates that by modifying the design, the operating voltage can be reduced by a factor of two, compared to the existing symmetric coplanar EWOD structures. Droplet manipulation on a coplanar EWOD system with this new design has been successfully demonstrated, with a driving voltage of 15V.

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T3 - IEEE International Conference on Microelectronic Test Structures

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BT - 2008 IEEE Conference on Microelectronic Test Structures, ICMTS

T2 - 2008 IEEE Conference on Microelectronic Test Structures, ICMTS

Y2 - 24 March 2008 through 27 March 2008

ER -

Test structure for characterising low voltage coplanar EWOD system

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