Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang; Yifan Li; J. Murray; A. Bunting; S. Smith; C. Dunare; J. Stevenson; Marc Desmulliez; Anthony Walton

doi:10.1109/ICMTS.2013.6528142

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang, Yifan Li, J. Murray, A. Bunting, S. Smith, C. Dunare, J. Stevenson, Marc Desmulliez, Anthony Walton

Mechanical and Construction Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

3 Citations (Scopus)

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.

Original language	English
Title of host publication	Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	37-42
ISBN (Print)	978-1-4673-4845-4
DOIs	https://doi.org/10.1109/ICMTS.2013.6528142
Publication status	Published - 2013
Event	Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on - Duration: 1 Jan 2013 → …

Conference

Conference	Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Period	1/01/13 → …

Keywords

Daisy chain
Kelvin structure
TSV
electroplating
photoresist CMP

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10.1109/ICMTS.2013.6528142

Cite this

Zhang, R., Li, Y., Murray, J., Bunting, A., Smith, S., Dunare, C., Stevenson, J., Desmulliez, M., & Walton, A. (2013). Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. In Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on (pp. 37-42). IEEE. https://doi.org/10.1109/ICMTS.2013.6528142

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title = "Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist",

abstract = "An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.",

keywords = "Daisy chain, Kelvin structure, TSV, electroplating, photoresist CMP",

author = "R. Zhang and Yifan Li and J. Murray and A. Bunting and S. Smith and C. Dunare and J. Stevenson and Marc Desmulliez and Anthony Walton",

year = "2013",

doi = "10.1109/ICMTS.2013.6528142",

language = "English",

isbn = "978-1-4673-4845-4",

pages = "37--42",

booktitle = "Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on",

publisher = "IEEE",

address = "United States",

note = "Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on ; Conference date: 01-01-2013",

}

Zhang, R, Li, Y, Murray, J, Bunting, A, Smith, S, Dunare, C, Stevenson, J, Desmulliez, M & Walton, A 2013, Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. in Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on. IEEE, Piscataway, NJ, pp. 37-42, Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on, 1/01/13. https://doi.org/10.1109/ICMTS.2013.6528142

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. / Zhang, R.; Li, Yifan; Murray, J. et al.
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on. Piscataway, NJ: IEEE, 2013. p. 37-42.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

TY - CHAP

T1 - Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

AU - Zhang, R.

AU - Li, Yifan

AU - Murray, J.

AU - Bunting, A.

AU - Smith, S.

AU - Dunare, C.

AU - Stevenson, J.

AU - Desmulliez, Marc

AU - Walton, Anthony

PY - 2013

Y1 - 2013

N2 - An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.

AB - An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.

KW - Daisy chain

KW - Kelvin structure

KW - TSV

KW - electroplating

KW - photoresist CMP

U2 - 10.1109/ICMTS.2013.6528142

DO - 10.1109/ICMTS.2013.6528142

M3 - Chapter

SN - 978-1-4673-4845-4

SP - 37

EP - 42

BT - Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

PB - IEEE

CY - Piscataway, NJ

T2 - Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

Y2 - 1 January 2013

ER -

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

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Keywords

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