Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang, Yifan Li, J. Murray, A. Bunting, S. Smith, C. Dunare, J. Stevenson, Marc Desmulliez, Anthony Walton

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

3 Citations (Scopus)

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.
Original languageEnglish
Title of host publicationMicroelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages37-42
ISBN (Print)978-1-4673-4845-4
DOIs
Publication statusPublished - 2013
EventMicroelectronic Test Structures (ICMTS), 2013 IEEE International Conference on -
Duration: 1 Jan 2013 → …

Conference

ConferenceMicroelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Period1/01/13 → …

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