Thickness dependence of structure and optoelectronic properties of In2O3:Mo films prepared by spray pyrolysis

Pathi Prathap; Naidu Revathi; Kotte Ramakrishna Reddy; Robert Miles

doi:10.1016/j.tsf.2009.01.188

Thickness dependence of structure and optoelectronic properties of In2O3:Mo films prepared by spray pyrolysis

Pathi Prathap, Naidu Revathi, Kotte Ramakrishna Reddy, Robert Miles

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The influence of thickness on the structural, morphological and optoelectronic behavior of Mo-doped In2O3 films, prepared by spray pyrolysis was investigated. The films had the cubic crystal structure for all the thicknesses investigated although it was found that a change in the preferred orientation and growth mode, from 2D to 3D, has occurred with an increase of film thickness. A small degradation in the optical transmittance has been observed with the increase of film thickness. The variation of electrical resistivity, mobility and charge carrier concentration with film thickness were also studied and the results discussed.

Original language	English
Pages (from-to)	1271-1274
Journal	Thin Solid Films
Volume	518
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2009.01.188
Publication status	Published - 2009

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10.1016/j.tsf.2009.01.188

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abstract = "The influence of thickness on the structural, morphological and optoelectronic behavior of Mo-doped In2O3 films, prepared by spray pyrolysis was investigated. The films had the cubic crystal structure for all the thicknesses investigated although it was found that a change in the preferred orientation and growth mode, from 2D to 3D, has occurred with an increase of film thickness. A small degradation in the optical transmittance has been observed with the increase of film thickness. The variation of electrical resistivity, mobility and charge carrier concentration with film thickness were also studied and the results discussed.",

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AU - Prathap, Pathi

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AU - Ramakrishna Reddy, Kotte

AU - Miles, Robert

PY - 2009

Y1 - 2009

N2 - The influence of thickness on the structural, morphological and optoelectronic behavior of Mo-doped In2O3 films, prepared by spray pyrolysis was investigated. The films had the cubic crystal structure for all the thicknesses investigated although it was found that a change in the preferred orientation and growth mode, from 2D to 3D, has occurred with an increase of film thickness. A small degradation in the optical transmittance has been observed with the increase of film thickness. The variation of electrical resistivity, mobility and charge carrier concentration with film thickness were also studied and the results discussed.

AB - The influence of thickness on the structural, morphological and optoelectronic behavior of Mo-doped In2O3 films, prepared by spray pyrolysis was investigated. The films had the cubic crystal structure for all the thicknesses investigated although it was found that a change in the preferred orientation and growth mode, from 2D to 3D, has occurred with an increase of film thickness. A small degradation in the optical transmittance has been observed with the increase of film thickness. The variation of electrical resistivity, mobility and charge carrier concentration with film thickness were also studied and the results discussed.

UR - https://www.scopus.com/pages/publications/71649098445

U2 - 10.1016/j.tsf.2009.01.188

DO - 10.1016/j.tsf.2009.01.188

M3 - Article

SN - 0040-6090

VL - 518

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

Thickness dependence of structure and optoelectronic properties of In2O3:Mo films prepared by spray pyrolysis

Abstract

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