Thin films of tin sulphide for use in thin film solar cell devices

Ogah E. Ogah, Guillaume Zoppi, Ian Forbes, Robert Miles

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)

Abstract

SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto soda–lime glass substrates with the aim of optimising the properties of the material for use in superstrate configuration device structures. The thin films were characterised using energy dispersive X-ray analysis (EDS) to determine the film composition, X-ray diffraction (XRD) to determine the phases present and structure of each phase, transmittance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy (SEM) to observe the surface topology and topography. These properties were then correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free and conformal to the substrate that are suitable for use in thin film solar cell structures.
Original languageEnglish
Pages (from-to)2485-2488
JournalThin Solid Films
Volume517
Issue number7
DOIs
Publication statusPublished - Feb 2009

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