Abstract
We present the results of calculations of the microcavity mode structure of distributed-Bragg-reflector (DBR) micro-pillar microcavities of group III-V semiconductor materials. These structures are suitable for making single photon sources when a single quantum dot is located at the center of a wavelength scale cavity. The 3-D finite difference time domain (FDTD) method is our primary simulation tool and results are validated against semi-analytic models. We show that high light extraction efficiencies can be achieved (>90%) limited by sidewall scattering and leakage. Using radial trench DBR microcavities or 2-D photonic crystal structures, we can further suppress sidewall emission, however, light is then redirected into other leaky modes
Original language | English |
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Pages (from-to) | 462-472 |
Number of pages | 11 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 43 |
Issue number | 6 |
Early online date | 21 May 2007 |
DOIs | |
Publication status | Published - Jun 2007 |
Externally published | Yes |
Keywords
- Finite difference methods
- Time domain analysis
- Solid modeling
- Microcavities
- Geometry
- Distributed Bragg reflectors
- III-V semiconductor materials
- Semiconductor materials
- Quantum dots
- Light scattering