Ti-TiOx-Pt metal-oxide-metal diodes fabricated via a simple oxidation technique

L. E. Dodd; Andrew Gallant; David Wood

doi:10.1557/opl.2012.72

Ti-TiOx-Pt metal-oxide-metal diodes fabricated via a simple oxidation technique

L. E. Dodd, Andrew Gallant, David Wood

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This work presents the successful production, via a simple oxidation process, of Ti-TiOx-Pt Metal-Oxide-Metal diodes with excellent electrical asymmetry. TEM analysis has been used to verify the oxide thickness. A thicker layer produces better diodes, although they are of a less uniform nature. The conduction mechanism in these diodes is still under investigation.

Original language	English
Article number	mrsf11-1415-tt04-06
Journal	MRS Proceedings
Volume	1415
DOIs	https://doi.org/10.1557/opl.2012.72
Publication status	Published - 12 Jan 2012

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10.1557/opl.2012.72

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title = "Ti-TiOx-Pt metal-oxide-metal diodes fabricated via a simple oxidation technique",

abstract = "This work presents the successful production, via a simple oxidation process, of Ti-TiOx-Pt Metal-Oxide-Metal diodes with excellent electrical asymmetry. TEM analysis has been used to verify the oxide thickness. A thicker layer produces better diodes, although they are of a less uniform nature. The conduction mechanism in these diodes is still under investigation.",

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AU - Gallant, Andrew

AU - Wood, David

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N2 - This work presents the successful production, via a simple oxidation process, of Ti-TiOx-Pt Metal-Oxide-Metal diodes with excellent electrical asymmetry. TEM analysis has been used to verify the oxide thickness. A thicker layer produces better diodes, although they are of a less uniform nature. The conduction mechanism in these diodes is still under investigation.

AB - This work presents the successful production, via a simple oxidation process, of Ti-TiOx-Pt Metal-Oxide-Metal diodes with excellent electrical asymmetry. TEM analysis has been used to verify the oxide thickness. A thicker layer produces better diodes, although they are of a less uniform nature. The conduction mechanism in these diodes is still under investigation.

UR - https://www.scopus.com/pages/publications/84864970114

U2 - 10.1557/opl.2012.72

DO - 10.1557/opl.2012.72

M3 - Article

SN - 1946-4274

VL - 1415

JO - MRS Proceedings

JF - MRS Proceedings

M1 - mrsf11-1415-tt04-06

ER -

Ti-TiOx-Pt metal-oxide-metal diodes fabricated via a simple oxidation technique

Abstract

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Conduction mechanisms in metal/self-assembled monolayer/metal junction

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