TY - JOUR
T1 - Transparent Conducting Gallium-Doped Zinc Oxide Thin Films on Glass Substrate for Optoelectronic Device Applications
AU - Das, Himadri Sekhar
AU - Mishra, Santanu
AU - Dash, Mrinal Kanti
AU - Nandi, Prasanta Kumar
AU - Maity, Subir Kumar
AU - Khatua, Debnarayan
AU - Chatterjee, Anindita
AU - Guo, Zhanhu
AU - Xu, Ben Bin
AU - Roymahapatra, Gourisankar
PY - 2023/3/15
Y1 - 2023/3/15
N2 - Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode-based OLED. The obtained GZO-based OLED shows similar performance compared with ITO-based OLED devices.
AB - Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode-based OLED. The obtained GZO-based OLED shows similar performance compared with ITO-based OLED devices.
KW - Ga-doped zinc oxide
KW - Organic light-emitting diode
KW - RF magnetron sputtering
KW - Transparent conducting oxide
UR - http://www.scopus.com/inward/record.url?scp=85188161328&partnerID=8YFLogxK
U2 - 10.30919/esmm5f841
DO - 10.30919/esmm5f841
M3 - Article
AN - SCOPUS:85188161328
SN - 2578-0611
VL - 22
SP - 1
EP - 7
JO - ES Materials and Manufacturing
JF - ES Materials and Manufacturing
M1 - 841
ER -