Transparent Conducting Gallium-Doped Zinc Oxide Thin Films on Glass Substrate for Optoelectronic Device Applications

Himadri Sekhar Das; Santanu Mishra; Mrinal Kanti Dash; Prasanta Kumar Nandi; Subir Kumar Maity; Debnarayan Khatua; Anindita Chatterjee; Zhanhu Guo; Ben Bin Xu; Gourisankar Roymahapatra

doi:10.30919/esmm5f841

Transparent Conducting Gallium-Doped Zinc Oxide Thin Films on Glass Substrate for Optoelectronic Device Applications

Himadri Sekhar Das^*, Santanu Mishra, Mrinal Kanti Dash, Prasanta Kumar Nandi, Subir Kumar Maity, Debnarayan Khatua, Anindita Chatterjee, Zhanhu Guo, Ben Bin Xu, Gourisankar Roymahapatra

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

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Abstract

Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10^-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode-based OLED. The obtained GZO-based OLED shows similar performance compared with ITO-based OLED devices.

Original language	English
Article number	841
Pages (from-to)	1-7
Number of pages	7
Journal	ES Materials and Manufacturing
Volume	22
DOIs	https://doi.org/10.30919/esmm5f841
Publication status	Published - 15 Mar 2023

Keywords

Ga-doped zinc oxide
Organic light-emitting diode
RF magnetron sputtering
Transparent conducting oxide

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esmm5f841Final published version, 1.04 MBLicence: CC BY

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title = "Transparent Conducting Gallium-Doped Zinc Oxide Thin Films on Glass Substrate for Optoelectronic Device Applications",

abstract = "Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 \%. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode-based OLED. The obtained GZO-based OLED shows similar performance compared with ITO-based OLED devices.",

keywords = "Ga-doped zinc oxide, Organic light-emitting diode, RF magnetron sputtering, Transparent conducting oxide",

author = "Das, \{Himadri Sekhar\} and Santanu Mishra and Dash, \{Mrinal Kanti\} and Nandi, \{Prasanta Kumar\} and Maity, \{Subir Kumar\} and Debnarayan Khatua and Anindita Chatterjee and Zhanhu Guo and Xu, \{Ben Bin\} and Gourisankar Roymahapatra",

year = "2023",

month = mar,

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doi = "10.30919/esmm5f841",

language = "English",

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AU - Das, Himadri Sekhar

AU - Mishra, Santanu

AU - Dash, Mrinal Kanti

AU - Nandi, Prasanta Kumar

AU - Maity, Subir Kumar

AU - Khatua, Debnarayan

AU - Chatterjee, Anindita

AU - Guo, Zhanhu

AU - Xu, Ben Bin

AU - Roymahapatra, Gourisankar

PY - 2023/3/15

Y1 - 2023/3/15

N2 - Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode-based OLED. The obtained GZO-based OLED shows similar performance compared with ITO-based OLED devices.

AB - Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode-based OLED. The obtained GZO-based OLED shows similar performance compared with ITO-based OLED devices.

KW - Ga-doped zinc oxide

KW - Organic light-emitting diode

KW - RF magnetron sputtering

KW - Transparent conducting oxide

UR - https://www.scopus.com/pages/publications/85188161328

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DO - 10.30919/esmm5f841

M3 - Article

AN - SCOPUS:85188161328

SN - 2578-0611

VL - 22

SP - 1

EP - 7

JO - ES Materials and Manufacturing

JF - ES Materials and Manufacturing

M1 - 841

ER -

Transparent Conducting Gallium-Doped Zinc Oxide Thin Films on Glass Substrate for Optoelectronic Device Applications

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Keywords

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