Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment

Patrick Nwofe; Kotte Ramakrishna Reddy; Robert Miles

doi:10.1109/PVSC.2013.6744988

Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment

Patrick Nwofe, Kotte Ramakrishna Reddy, Robert Miles

Research output: Contribution to conference › Paper › peer-review

8 Citations (Scopus)

Abstract

Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2 nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl4/CH3OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400°C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl4/CH3OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.

Original language	English
DOIs	https://doi.org/10.1109/PVSC.2013.6744988
Publication status	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference (PVSC) - Tampa, Florida Duration: 1 Jan 2013 → …

Conference

Conference	39th IEEE Photovoltaic Specialists Conference (PVSC)
Period	1/01/13 → …

Keywords

annealing
film thickness
type-conversion
homojunction

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10.1109/PVSC.2013.6744988

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title = "Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment",

abstract = "Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2 nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl4/CH3OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400°C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl4/CH3OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.",

keywords = "annealing, film thickness, type-conversion, homojunction",

author = "Patrick Nwofe and {Ramakrishna Reddy}, Kotte and Robert Miles",

year = "2013",

doi = "10.1109/PVSC.2013.6744988",

language = "English",

note = "39th IEEE Photovoltaic Specialists Conference (PVSC) ; Conference date: 01-01-2013",

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TY - CONF

T1 - Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment

AU - Nwofe, Patrick

AU - Ramakrishna Reddy, Kotte

AU - Miles, Robert

PY - 2013

Y1 - 2013

N2 - Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2 nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl4/CH3OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400°C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl4/CH3OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.

AB - Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2 nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl4/CH3OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400°C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl4/CH3OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.

KW - annealing

KW - film thickness

KW - type-conversion

KW - homojunction

U2 - 10.1109/PVSC.2013.6744988

DO - 10.1109/PVSC.2013.6744988

M3 - Paper

T2 - 39th IEEE Photovoltaic Specialists Conference (PVSC)

Y2 - 1 January 2013

ER -

Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment

Abstract

Conference

Keywords

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