Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment

Patrick Nwofe, Kotte Ramakrishna Reddy, Robert Miles

    Research output: Contribution to conferencePaperpeer-review

    6 Citations (Scopus)

    Abstract

    Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2 nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl4/CH3OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400°C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl4/CH3OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.
    Original languageEnglish
    DOIs
    Publication statusPublished - 2013
    Event39th IEEE Photovoltaic Specialists Conference (PVSC) - Tampa, Florida
    Duration: 1 Jan 2013 → …

    Conference

    Conference39th IEEE Photovoltaic Specialists Conference (PVSC)
    Period1/01/13 → …

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