Abstract
Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.
Original language | English |
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Pages (from-to) | 8412-8418 |
Number of pages | 7 |
Journal | ACS applied materials & interfaces |
Volume | 11 |
Issue number | 8 |
Early online date | 4 Feb 2019 |
DOIs | |
Publication status | Published - 27 Feb 2019 |
Keywords
- deep ultraviolet
- graphene
- photovoltaic detector
- ultrafast
- ZnS quantum dots