Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Hao Kan, Wei Zheng, Richeng Lin, Min Li, Chen Fu, Huibin Sun, Mei Dong, Cunhua Xu, Jingting Luo, Yong Qing Fu, Feng Huang

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)
13 Downloads (Pure)

Abstract

Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.

Original languageEnglish
Pages (from-to)8412-8418
Number of pages7
JournalACS applied materials & interfaces
Volume11
Issue number8
Early online date4 Feb 2019
DOIs
Publication statusPublished - 27 Feb 2019

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