Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Hao Kan; Wei Zheng; Richeng Lin; Min Li; Chen Fu; Huibin Sun; Mei Dong; Cunhua Xu; Jingting Luo; Yong Qing Fu; Feng Huang

doi:10.1021/acsami.8b20357

Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Hao Kan, Wei Zheng, Richeng Lin, Min Li, Chen Fu, Huibin Sun, Mei Dong, Cunhua Xu, Jingting Luo, Yong Qing Fu, Feng Huang

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

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Abstract

Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.

Original language	English
Pages (from-to)	8412-8418
Number of pages	7
Journal	ACS applied materials & interfaces
Volume	11
Issue number	8
Early online date	4 Feb 2019
DOIs	https://doi.org/10.1021/acsami.8b20357
Publication status	Published - 27 Feb 2019

Keywords

deep ultraviolet
graphene
photovoltaic detector
ultrafast
ZnS quantum dots

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Ultra-fastAccepted author manuscript, 840 KB
Kan et al - Ultra-Fast Photovoltaic-Type Deep-Ultraviolet Photodetector AAMAccepted author manuscript, 2.13 MB

Cite this

@article{b2a20910547843b88fb8690bc05d02d1,

title = "Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions",

abstract = "Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.",

keywords = "deep ultraviolet, graphene, photovoltaic detector, ultrafast, ZnS quantum dots",

author = "Hao Kan and Wei Zheng and Richeng Lin and Min Li and Chen Fu and Huibin Sun and Mei Dong and Cunhua Xu and Jingting Luo and Fu, \{Yong Qing\} and Feng Huang",

year = "2019",

month = feb,

day = "27",

doi = "10.1021/acsami.8b20357",

language = "English",

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journal = "ACS applied materials \& interfaces",

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TY - JOUR

T1 - Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

AU - Kan, Hao

AU - Zheng, Wei

AU - Lin, Richeng

AU - Li, Min

AU - Fu, Chen

AU - Sun, Huibin

AU - Dong, Mei

AU - Xu, Cunhua

AU - Luo, Jingting

AU - Fu, Yong Qing

AU - Huang, Feng

PY - 2019/2/27

Y1 - 2019/2/27

N2 - Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.

AB - Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.

KW - deep ultraviolet

KW - graphene

KW - photovoltaic detector

KW - ultrafast

KW - ZnS quantum dots

UR - https://www.scopus.com/pages/publications/85061926084

U2 - 10.1021/acsami.8b20357

DO - 10.1021/acsami.8b20357

M3 - Article

SN - 1944-8244

VL - 11

SP - 8412

EP - 8418

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 8

ER -

Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Abstract

Keywords

UN SDGs

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