ZnO film for application in surface acoustic wave device

X. Y. Du, Y. Q. Fu*, S. C. Tan, J. K. Luo, A. J. Flewitt, S. Maeng, S. H. Kim, Y. J. Choi, D. S. Lee, N. M. Park, J. Park, W. I. Milne

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)


High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO2layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave.

Original languageEnglish
Article number012035
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 1 Sept 2007
Externally publishedYes


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