ZnO film for application in surface acoustic wave device

X. Y. Du; Y. Q. Fu; S. C. Tan; J. K. Luo; A. J. Flewitt; S. Maeng; S. H. Kim; Y. J. Choi; D. S. Lee; N. M. Park; J. Park; W. I. Milne

doi:10.1088/1742-6596/76/1/012035

ZnO film for application in surface acoustic wave device

X. Y. Du, Y. Q. Fu^*, S. C. Tan, J. K. Luo, A. J. Flewitt, S. Maeng, S. H. Kim, Y. J. Choi, D. S. Lee, N. M. Park, J. Park, W. I. Milne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO₂layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave.

Original language	English
Article number	012035
Journal	Journal of Physics: Conference Series
Volume	76
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/76/1/012035
Publication status	Published - 1 Sept 2007
Externally published	Yes

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title = "ZnO film for application in surface acoustic wave device",

abstract = "High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO2layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave.",

author = "Du, {X. Y.} and Fu, {Y. Q.} and Tan, {S. C.} and Luo, {J. K.} and Flewitt, {A. J.} and S. Maeng and Kim, {S. H.} and Choi, {Y. J.} and Lee, {D. S.} and Park, {N. M.} and J. Park and Milne, {W. I.}",

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AU - Du, X. Y.

AU - Fu, Y. Q.

AU - Tan, S. C.

AU - Luo, J. K.

AU - Flewitt, A. J.

AU - Maeng, S.

AU - Kim, S. H.

AU - Choi, Y. J.

AU - Lee, D. S.

AU - Park, N. M.

AU - Park, J.

AU - Milne, W. I.

PY - 2007/9/1

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N2 - High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO2layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave.

AB - High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO2layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave.

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ZnO film for application in surface acoustic wave device

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